FCA20N60-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Series :

SuperFET™

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Resistance :

190mOhm

Power Dissipation :

208W

Element Configuration :

Single

Vgs (Max) :

±30V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Weight :

6.401g

Number of Elements :

1

Continuous Drain Current (ID) :

20A

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

60A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 day ago)

Base Part Number :

FCA20N60

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

62 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Avalanche Energy Rating (Eas) :

690 mJ

Package / Case :

TO-3P-3, SC-65-3

Pbfree Code :

yes

Packaging :

Tube

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Terminal Finish :

MATTE TIN

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Rise Time :

140ns

Fall Time (Typ) :

65 ns

Radiation Hardening :

No

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

FET Type :

N-Channel

Power Dissipation-Max :

208W Tc

Turn-Off Delay Time :

230 ns