EMX26T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pbfree Code :

yes

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Width :

1.2mm

Polarity :

NPN

Number of Terminations :

6

Current - Collector Cutoff (Max) :

300nA ICBO

Max Breakdown Voltage :

12V

Base Part Number :

*MX26

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Published :

2005

Number of Elements :

2

Element Configuration :

Dual

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

60V

Terminal Form :

Flat

Height :

500μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 50mA 5V

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Power - Max :

150mW

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Transistor Type :

2 NPN (Dual)

Max Collector Current :

150mA

Emitter Base Voltage (VEBO) :

12V

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

13 Weeks

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Gain Bandwidth Product :

250MHz

Collector Emitter Saturation Voltage :

300mV

Transition Frequency :

250MHz

Mount :

Surface Mount

Max Power Dissipation :

150mW

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Length :

1.6mm