EMX2DXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

Surface Mount :

yes

Frequency :

180MHz

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Collector Emitter Saturation Voltage :

400mV

Polarity :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Power Dissipation :

500mW

Number of Elements :

2

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

2 Weeks

Emitter Base Voltage (VEBO) :

7V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

500nA ICBO

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Transistor Type :

2 NPN (Dual)

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

180MHz

Number of Pins :

6

Current Rating :

100mA

Voltage - Rated DC :

50V

Pin Count :

6

ECCN Code :

EAR99

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

hFE Min :

120

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Terminations :

6

Collector Base Voltage (VCBO) :

60V

Gain Bandwidth Product :

180MHz

Package / Case :

SOT-563, SOT-666

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

500mW

Transistor Application :

AMPLIFIER