EMX2DXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Tape and Reel (TR)

Factory Lead Time :

2 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Published :

2005

Collector Emitter Saturation Voltage :

400mV

Radiation Hardening :

No

Current Rating :

100mA

Pin Count :

6

Terminal Form :

Flat

Transition Frequency :

180MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Gain Bandwidth Product :

180MHz

Package / Case :

SOT-563, SOT-666

Collector Base Voltage (VCBO) :

60V

Pbfree Code :

yes

Number of Pins :

6

Polarity :

NPN

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

50V

JESD-609 Code :

e3

Transistor Type :

2 NPN (Dual)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Max Power Dissipation :

500mW

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Power Dissipation :

500mW

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

7V

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Frequency :

180MHz

Terminal Finish :

Tin (Sn)

hFE Min :

120

Current - Collector Cutoff (Max) :

500nA ICBO

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V