EMH10T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

300mV

Resistor - Emitter Base (R2) :

22k Ω

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

150mW

Max Breakdown Voltage :

50V

Transition Frequency :

250MHz

Power Dissipation :

150mW

Number of Elements :

2

Number of Pins :

6

Transistor Type :

2 NPN - Pre-Biased (Dual)

Resistor - Base (R1) :

22k Ω

Polarity :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Output Current :

100mA

hFE Min :

80

Min Operating Temperature :

-55°C

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

250MHz

Element Configuration :

Dual

Factory Lead Time :

13 Weeks

Continuous Collector Current :

100mA

Pin Count :

6

JESD-609 Code :

e2

Terminal Form :

Flat

Operating Supply Voltage :

50V

HTS Code :

8541.21.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

Published :

2000

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Pbfree Code :

yes

Base Part Number :

*MH10

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin/Copper (Sn/Cu)

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V