EMG5T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Current Rating :

70mA

Resistor - Emitter Base (R2) :

47k Ω

Transistor Application :

SWITCHING

Factory Lead Time :

13 Weeks

Transition Frequency :

250MHz

Continuous Collector Current :

100mA

Number of Pins :

5

Max Power Dissipation :

150mW

Collector Emitter Voltage (VCEO) :

300mV

ECCN Code :

EAR99

Terminal Finish :

Tin/Copper (Sn/Cu)

Power Dissipation :

150mW

Min Operating Temperature :

-55°C

Number of Terminations :

5

Radiation Hardening :

No

Transistor Type :

2 NPN - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

10

Base Part Number :

*MG5

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

10k Ω

hFE Min :

68

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Mounting Type :

Surface Mount

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Package / Case :

6-SMD (5 Leads), Flat Lead

JESD-609 Code :

e2

Max Operating Temperature :

150°C

Pbfree Code :

yes

Pin Count :

5

Lead Free :

Lead Free

Max Collector Current :

100mA

Published :

2011

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Frequency - Transition :

250MHz

Max Output Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA