EMF8T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Resistor - Emitter Base (R2) :

47k Ω

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

HTS Code :

8541.21.00.75

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Number of Terminations :

6

hFE Min :

270

Number of Pins :

6

Frequency - Transition :

250MHz 320MHz

Time@Peak Reflow Temperature-Max (s) :

10

Element Configuration :

Dual

Polarity :

NPN

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA

Package / Case :

SOT-563, SOT-666

Transistor Type :

1 NPN Pre-Biased, 1 NPN

Terminal Form :

Flat

Resistor - Base (R1) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V / 270 @ 10mA 2V

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Transition Frequency :

250MHz

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Max Power Dissipation :

150mW

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Current - Collector (Ic) (Max) :

100mA 500mA

Mount :

Surface Mount

Number of Elements :

2

Max Collector Current :

500mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

12V

Published :

2004

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN COPPER

Mounting Type :

Surface Mount