EMF5XV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Max Power Dissipation :

500mW

Published :

2005

Surface Mount :

yes

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Power Dissipation :

500mW

Collector Emitter Breakdown Voltage :

12V

Resistor - Base (R1) :

47k Ω

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Collector Emitter Saturation Voltage :

250mV

Polarity :

NPN, PNP

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

EMF

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

250mV

Mounting Type :

Surface Mount

Current Rating :

100mA

Current - Collector (Ic) (Max) :

100mA 500mA

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Emitter Base Voltage (VEBO) :

6V

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

12V

Package / Case :

SOT-563, SOT-666

Pin Count :

6

Factory Lead Time :

17 Weeks

JESD-609 Code :

e3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature (Max) :

150°C

Number of Pins :

6

Collector Base Voltage (VCBO) :

50V

Pbfree Code :

yes

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

47k Ω

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA

Packaging :

Tape and Reel (TR)

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 270 @ 10mA 2V

ECCN Code :

EAR99

hFE Min :

80