EMF5XV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

17 Weeks

Radiation Hardening :

No

Terminal Form :

Flat

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

50V

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

6V

Halogen Free :

Halogen Free

Base Part Number :

EMF

Resistor - Emitter Base (R2) :

47k Ω

Current Rating :

100mA

Package / Case :

SOT-563, SOT-666

Current - Collector (Ic) (Max) :

100mA 500mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA

Current - Collector Cutoff (Max) :

500nA

hFE Min :

80

Pin Count :

6

JESD-609 Code :

e3

Resistor - Base (R1) :

47k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 270 @ 10mA 2V

Max Breakdown Voltage :

12V

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Polarity :

NPN, PNP

Operating Temperature (Max) :

150°C

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

250mV

Pbfree Code :

yes

Max Power Dissipation :

500mW

Collector Emitter Voltage (VCEO) :

250mV

Published :

2005

Power Dissipation :

500mW

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Element Configuration :

Dual

Number of Elements :

2

ECCN Code :

EAR99

Max Collector Current :

500mA

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Collector Emitter Breakdown Voltage :

12V

Surface Mount :

yes

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)