EMF5XV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

47k Ω

JESD-609 Code :

e3

Resistor - Base (R1) :

47k Ω

Base Part Number :

EMF

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

250mV

Package / Case :

SOT-563, SOT-666

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Pin Count :

6

hFE Min :

80

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Operating Temperature (Max) :

150°C

Surface Mount :

yes

Published :

2005

Max Collector Current :

500mA

Radiation Hardening :

No

Current - Collector (Ic) (Max) :

100mA 500mA

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Dual

Max Power Dissipation :

500mW

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

12V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Factory Lead Time :

17 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 270 @ 10mA 2V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Form :

Flat

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Max Breakdown Voltage :

12V

Number of Elements :

2

Transistor Element Material :

SILICON

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Power Dissipation :

500mW

Collector Emitter Saturation Voltage :

250mV

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Halogen Free :

Halogen Free

Collector Base Voltage (VCBO) :

50V

Polarity :

NPN, PNP