EMF5T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Mount :

Surface Mount

Polarity :

PNP, NPN

Max Breakdown Voltage :

12V

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

47k Ω

Pin Count :

6

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V / 270 @ 10mA 2V

Power Dissipation :

150mW

Continuous Collector Current :

-500mA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

ECCN Code :

EAR99

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Number of Pins :

6

hFE Min :

270

Resistor - Base (R1) :

47k Ω

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Type :

1 NPN Pre-Biased, 1 PNP

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Published :

2003

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

100mA 500mA

Output Voltage :

12V

JESD-609 Code :

e2

Max Collector Current :

500mA

Frequency - Transition :

250MHz 260MHz

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Current Rating :

100mA

Time@Peak Reflow Temperature-Max (s) :

10

Transition Frequency :

250MHz

HTS Code :

8541.21.00.75

Collector Emitter Voltage (VCEO) :

300mV

Peak Reflow Temperature (Cel) :

260

Base Part Number :

*MF5

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

-6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

Collector Emitter Breakdown Voltage :

12V

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes