EMD6T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

Pbfree Code :

yes

Max Power Dissipation :

150mW

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR

Frequency - Transition :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Collector Emitter Breakdown Voltage :

50V

Pin Count :

6

Number of Elements :

2

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.75

Min Operating Temperature :

-55°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Terminal Finish :

TIN COPPER

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2004

Base Part Number :

*MD6

Radiation Hardening :

No

Terminal Form :

Flat

Transition Frequency :

250MHz

Lead Free :

Lead Free

ECCN Code :

EAR99

Resistor - Base (R1) :

4.7k Ω

Current Rating :

100mA

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN, PNP

hFE Min :

100

Mount :

Surface Mount

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Number of Terminations :

6

Factory Lead Time :

13 Weeks