EMB9T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-100mA

Min Operating Temperature :

-55°C

Voltage - Rated DC :

-50V

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Number of Elements :

2

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Transition Frequency :

250MHz

Power Dissipation :

150mW

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Published :

2004

Max Output Current :

100mA

Resistor - Base (R1) :

10k Ω

Pbfree Code :

yes

Number of Terminations :

6

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

Base Part Number :

MB9

Lead Free :

Lead Free

Max Collector Current :

100mA

Max Power Dissipation :

150mW

Transistor Type :

2 PNP - Pre-Biased (Dual)

Operating Supply Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Voltage (VCEO) :

300mV

Pin Count :

6

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

-70mA

Max Operating Temperature :

150°C

Radiation Hardening :

No

HTS Code :

8541.21.00.75

hFE Min :

68

Terminal Form :

Flat

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Frequency - Transition :

250MHz

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)