EMA8T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Current Rating :

-100mA

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Mount :

Surface Mount

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

300mV

Polarity :

PNP

Terminal Finish :

Tin/Copper (Sn/Cu)

Published :

2001

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 4.7

Pbfree Code :

yes

hFE Min :

68

Resistor - Emitter Base (R2) :

47k Ω

Transition Frequency :

250MHz

Packaging :

Tape and Reel (TR)

Package / Case :

6-SMD (5 Leads), Flat Lead

Voltage - Rated DC :

-50V

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

ECCN Code :

EAR99

Max Breakdown Voltage :

50V

Pin Count :

5

Radiation Hardening :

No

Min Operating Temperature :

-50°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

5

Transistor Type :

2 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Resistor - Base (R1) :

10k Ω

Base Part Number :

MA8

Continuous Collector Current :

-100mA

Number of Terminations :

5

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Max Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

10

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Power Dissipation :

300mW