EMA5T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Package / Case :

6-SMD (5 Leads), Flat Lead

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Base Part Number :

MA5

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

hFE Min :

80

Number of Terminations :

5

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pbfree Code :

yes

Resistor - Emitter Base (R2) :

47k Ω

Pin Count :

5

Number of Elements :

2

Max Collector Current :

100mA

Transition Frequency :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Max Breakdown Voltage :

50V

Frequency - Transition :

250MHz

Lead Free :

Lead Free

Number of Pins :

5

Polarity :

PNP

Terminal Finish :

Tin/Copper (Sn/Cu)

Continuous Collector Current :

-100mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

2.2k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

300mV

Min Operating Temperature :

-55°C

Power Dissipation :

150mW

Published :

2012

Transistor Application :

SWITCHING

Factory Lead Time :

13 Weeks

Transistor Type :

2 PNP - Pre-Biased (Dual)