EMA5T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

5

Max Power Dissipation :

150mW

Radiation Hardening :

No

Published :

2012

Lead Free :

Lead Free

Number of Terminations :

5

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

Collector Emitter Voltage (VCEO) :

300mV

Transistor Application :

SWITCHING

Factory Lead Time :

13 Weeks

Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

10

Transition Frequency :

250MHz

Peak Reflow Temperature (Cel) :

260

Pin Count :

5

ECCN Code :

EAR99

Max Collector Current :

100mA

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Terminal Finish :

Tin/Copper (Sn/Cu)

Max Breakdown Voltage :

50V

Polarity :

PNP

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 PNP - Pre-Biased (Dual)

JESD-609 Code :

e2

Pbfree Code :

yes

hFE Min :

80

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

47k Ω

Continuous Collector Current :

-100mA

Frequency - Transition :

250MHz

Base Part Number :

MA5

Collector Emitter Breakdown Voltage :

50V

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Mounting Type :

Surface Mount

Number of Elements :

2

Resistor - Base (R1) :

2.2k Ω

Package / Case :

6-SMD (5 Leads), Flat Lead