EM6M2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1 Ω @ 200mA, 4V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

20V

Pbfree Code :

yes

Terminal Position :

Dual

Mount :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

10

Power - Max :

150mW

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-563, SOT-666

Max Power Dissipation :

150mW

Vgs(th) (Max) @ Id :

1V @ 1mA

Drain Current-Max (Abs) (ID) :

0.2A

Number of Elements :

2

Base Part Number :

*M2

Number of Terminations :

6

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Pin Count :

6

Terminal Form :

Flat

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Published :

2009

FET Type :

N and P-Channel

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

200mA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

1.4Ohm

FET Feature :

Logic Level Gate

ECCN Code :

EAR99