EM6M1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

0.9nC @ 4.5V

Published :

2008

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

100mA 200mA

Rds On (Max) @ Id, Vgs :

8 Ω @ 10mA, 4V

Terminal Form :

Flat

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Continuous Drain Current (ID) :

200mA

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

8Ohm

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.1A

Base Part Number :

6M1

Max Power Dissipation :

150mW

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V 20V

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

13pF @ 5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

TIN COPPER

Pin Count :

6

JESD-609 Code :

e2

Radiation Hardening :

No