EC3H02BA-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 20mA 5V

Mount :

Surface Mount

Power Dissipation :

100mW

Collector Emitter Voltage (VCEO) :

10V

Package / Case :

3-XFDFN

Noise Figure (dB Typ @ f) :

1dB @ 1GHz

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Gain :

8.5dB

Configuration :

Single

Collector Emitter Breakdown Voltage :

10V

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Operating Temperature :

150°C TJ

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

5000MHz

Frequency :

7GHz

Collector Base Voltage (VCBO) :

20V

Lead Free :

Lead Free

Max Power Dissipation :

100mW

Current - Collector (Ic) (Max) :

70mA

RoHS Status :

RoHS Compliant

Number of Elements :

1

Max Collector Current :

70mA

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

2V