DZT5551-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

4

Mounting Type :

Surface Mount

Factory Lead Time :

19 Weeks

Max Collector Current :

600mA

Element Configuration :

Single

hFE Min :

80

Collector Emitter Saturation Voltage :

115mV

Weight :

7.994566mg

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Width :

3.7mm

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

200V

Transistor Application :

SWITCHING

Gain Bandwidth Product :

300MHz

Mount :

Surface Mount

REACH SVHC :

No SVHC

Number of Terminations :

4

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

160V

Current - Collector Cutoff (Max) :

50nA ICBO

Polarity/Channel Type :

NPN

Max Breakdown Voltage :

160V

Package / Case :

TO-261-4, TO-261AA

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Length :

6.7mm

Terminal Form :

Gull wing

ECCN Code :

EAR99

Max Power Dissipation :

1W

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Published :

2007

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Height :

1.8mm

Pbfree Code :

yes

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

180V

Emitter Base Voltage (VEBO) :

6V

Radiation Hardening :

No

JESD-609 Code :

e3

Frequency :

300MHz

Power Dissipation :

2W

Base Part Number :

DZT5551

Max Junction Temperature (Tj) :

150°C