DZT5401-13
- Mfr.Part #
- DZT5401-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SOT223-3
- Stock
- 43,314
- In Stock :
- 43,314
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Gull wing
- Number of Pins :
- 4
- Max Power Dissipation :
- 1W
- Base Part Number :
- DZT5401
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 160V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Frequency :
- 300MHz
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Width :
- 3.5mm
- Length :
- 6.5mm
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 150V
- Collector Emitter Voltage (VCEO) :
- 150V
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 600mA
- Factory Lead Time :
- 19 Weeks
- Gain Bandwidth Product :
- 300MHz
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 150V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -500mV
- Published :
- 2007
- Height :
- 1.6mm
- Weight :
- 7.994566mg
- Datasheets
- DZT5401-13

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT5401-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 600mA volts.
DZT5401-13 Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
DZT5401-13 Applications
There are a lot of Diodes Incorporated
DZT5401-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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