DZT5551Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

50μA ICBO

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

19 Weeks

JESD-30 Code :

R-PDSO-G4

Polarity/Channel Type :

NPN

Transition Frequency :

130MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Terminal Form :

Gull wing

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

160V

Frequency - Transition :

300MHz

Max Power Dissipation :

2W

Terminal Position :

Dual

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

200mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Max Collector Current :

600mA

Power - Max :

2W

Mount :

Surface Mount

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-261-4, TO-261AA

Configuration :

Single

Additional Feature :

High Reliability

JESD-609 Code :

e3

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED