DZT591C-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Surface Mount

Max Breakdown Voltage :

60V

Pbfree Code :

yes

Mount :

Surface Mount

Number of Terminations :

4

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Power Dissipation :

1W

Collector Base Voltage (VCBO) :

80V

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 5V

Frequency :

150MHz

Transition Frequency :

150MHz

Polarity/Channel Type :

PNP

Length :

6.7mm

Terminal Form :

Gull wing

Height :

1.65mm

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP

Max Collector Current :

1A

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Gain Bandwidth Product :

150MHz

Case Connection :

COLLECTOR

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

60V

Max Power Dissipation :

1W

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

60V

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

-600mV

JESD-609 Code :

e3

hFE Min :

15

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)

Weight :

7.994566mg

Terminal Position :

Dual

Width :

3.7mm

Base Part Number :

DZT591

Package / Case :

TO-261-4, TO-261AA

Continuous Collector Current :

-1A

Peak Reflow Temperature (Cel) :

260