DXTN5860DFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Style :

SMD/SMT

Continuous Collector Current :

100

MSL :

MSL 1 - Unlimited

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

U-DFN2020-3 (Type B)

Frequency - Transition :

115MHz

Surface Mount :

yes

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Case Connection :

COLLECTOR

Power Dissipation :

1.5

Number of Elements :

1

Collector-Base Capacitance-Max :

30 pF

Qualification :

AEC-Q101

Current - Collector Cutoff (Max) :

100nA

DC Current Gain-Min (hFE) :

30

Maximum Operating Temperature :

+ 150 C

Power - Max :

690 mW

Reference Standard :

AEC-Q101

Collector-Emitter Voltage-Max :

60 V

Transistor Type :

NPN

Package :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

315mV @ 300mA, 6A

Number of Terminals :

3

Product Status :

Active

Current - Collector (Ic) (Max) :

6 A

Additional Feature :

High Reliability

Manufacturer :

Diodes Incorporated

Configuration :

Single

Terminal Form :

NO LEAD

DC Current Gain (hFE) (Min) @ Ic, Vce :

280 @ 500mA, 2V

Package / Case :

3-UDFN Exposed Pad

VCEsat-Max :

0.315 V

Subcategory :

Transistors

Terminal Position :

Dual

Collector Current-Max (IC) :

6 A

Polarity/Channel Type :

NPN

Brand :

Diodes Incorporated

JESD-30 Code :

S-PDSO-N3

Reach Compliance Code :

Unknown

Package Shape :

Square

Transistor Polarity :

PNP

Packaging :

Cut Tape

Mounting Type :

Surface Mount

Transition Frequency :

320

Technology :

Si

Product Category :

Bipolar Transistors - BJT

Voltage - Collector Emitter Breakdown (Max) :

60 V

Factory Lead Time :

13 Weeks

Series :

-

Power Dissipation-Max (Abs) :

1.25 W

Product Type :

BJTs - Bipolar Transistors