DXTN10060DFJBWQ-7
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- Mfr.Part #
- DXTN10060DFJBWQ-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A 3DFN
- Stock
- 2,772
- In Stock ：
- 2,772
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.8 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 340 @ 200mA, 2V
- Technology :
- Si
- Manufacturer :
- Diodes Incorporated
- Packaging :
- Cut Tape
- MSL :
- MSL 1 - Unlimited
- RoHS :
- Details
- Current - Collector (Ic) (Max) :
- 4 A
- Maximum Operating Temperature :
- + 175 C
- Transistor Polarity :
- NPN
- Qualification :
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Configuration :
- Single
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Brand :
- Diodes Incorporated
- Transition Frequency :
- 300
- Power Dissipation :
- 1.5
- Package / Case :
- 3-UDFN Exposed Pad
- Product Category :
- Bipolar Transistors - BJT
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package :
- Digi-Reel?
- Subcategory :
- Transistors
- Product Status :
- Active
- Frequency - Transition :
- 125MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Supplier Device Package :
- W-DFN2020-3 (Type A)
- Product Type :
- BJTs - Bipolar Transistors
- Continuous Collector Current :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 4A
- Transistor Type :
- NPN
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Datasheets
- DXTN10060DFJBWQ-7
NPN -55°C ~ 175°C (TJ) 100nA 3-UDFN Exposed Pad Cut Tape Surface Mount
DXTN10060DFJBWQ-7 Overview
In this device, the DC current gain is 340 @ 200mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 200mA, 4A.Maintaining the continuous collector voltage at 100 is essential for high efficiency.300 is present in the transition frequency.Supplier device package W-DFN2020-3 (Type A) comes with the product.The device exhibits a collector-emitter breakdown at 60 V.
DXTN10060DFJBWQ-7 Features
the DC current gain for this device is 340 @ 200mA, 2V
the vce saturation(Max) is 320mV @ 200mA, 4A
a transition frequency of 300
the supplier device package of W-DFN2020-3 (Type A)
DXTN10060DFJBWQ-7 Applications
There are a lot of Diodes Incorporated
DXTN10060DFJBWQ-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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