DXTN10060DFJBWQ-7

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Mfr.Part #
DXTN10060DFJBWQ-7
Manufacturer
Diodes Incorporated
Package / Case
3-UDFN Exposed Pad
Datasheet
Download
Description
TRANS NPN 60V 4A 3DFN
Stock
2,772
In Stock :
2,772

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
1.5
Vce Saturation (Max) @ Ib, Ic :
320mV @ 200mA, 4A
Current - Collector (Ic) (Max) :
4 A
Frequency - Transition :
125MHz
Manufacturer :
Diodes Incorporated
Supplier Device Package :
W-DFN2020-3 (Type A)
Transistor Type :
NPN
Series :
Automotive, AEC-Q101
Package :
Digi-Reel?
Minimum Operating Temperature :
- 55 C
Qualification :
AEC-Q101
Brand :
Diodes Incorporated
Continuous Collector Current :
100
Packaging :
Cut Tape
Package / Case :
3-UDFN Exposed Pad
Technology :
Si
Maximum Operating Temperature :
+ 175 C
Power - Max :
1.8 W
Transition Frequency :
300
DC Current Gain (hFE) (Min) @ Ic, Vce :
340 @ 200mA, 2V
Product Status :
Active
Current - Collector Cutoff (Max) :
100nA
Product Type :
BJTs - Bipolar Transistors
Mounting Type :
Surface Mount
Configuration :
Single
Product Category :
Bipolar Transistors - BJT
Operating Temperature :
-55°C ~ 175°C (TJ)
Transistor Polarity :
NPN
MSL :
MSL 1 - Unlimited
Subcategory :
Transistors
Mounting Style :
SMD/SMT
Voltage - Collector Emitter Breakdown (Max) :
60 V
RoHS :
Details
Datasheets
DXTN10060DFJBWQ-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DXTN10060DFJBWQ-7 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-UDFN Exposed Pad, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 175°C (TJ), DXTN10060DFJBWQ-7 pinout, DXTN10060DFJBWQ-7 datasheet PDF, DXTN10060DFJBWQ-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DXTN10060DFJBWQ-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DXTN10060DFJBWQ-7


NPN -55°C ~ 175°C (TJ) 100nA 3-UDFN Exposed Pad Cut Tape Surface Mount

DXTN10060DFJBWQ-7 Overview


In this device, the DC current gain is 340 @ 200mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 320mV @ 200mA, 4A.Maintaining the continuous collector voltage at 100 is essential for high efficiency.300 is present in the transition frequency.Supplier device package W-DFN2020-3 (Type A) comes with the product.The device exhibits a collector-emitter breakdown at 60 V.

DXTN10060DFJBWQ-7 Features


the DC current gain for this device is 340 @ 200mA, 2V
the vce saturation(Max) is 320mV @ 200mA, 4A
a transition frequency of 300
the supplier device package of W-DFN2020-3 (Type A)


DXTN10060DFJBWQ-7 Applications


There are a lot of Diodes Incorporated
DXTN10060DFJBWQ-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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