DXTN07100BP5-13
- Mfr.Part #
- DXTN07100BP5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A POWERDI5
- Stock
- 5,120
- In Stock :
- 5,120
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 3.2W
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-252
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 175MHz
- Power Dissipation :
- 3.2W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 740mW
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Published :
- 2016
- Collector Emitter Saturation Voltage :
- 500mV
- Pin Count :
- 4
- Max Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 120V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Manufacturer Package Identifier :
- POWERDI-5
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 175MHz
- Transition Frequency :
- 175MHz
- Factory Lead Time :
- 15 Weeks
- hFE Min :
- 100
- Max Collector Current :
- 2A
- Weight :
- 95.991485mg
- Collector Emitter Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- PowerDI™ 5
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Datasheets
- DXTN07100BP5-13
DXTN07100BP5-13 Documents

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXTN07100BP5-13 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 175MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.
DXTN07100BP5-13 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
DXTN07100BP5-13 Applications
There are a lot of Diodes Incorporated
DXTN07100BP5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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