DXTN07100BP5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

3.2W

Number of Pins :

3

REACH SVHC :

No SVHC

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

JEDEC-95 Code :

TO-252

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

100V

Emitter Base Voltage (VEBO) :

7V

Transistor Application :

SWITCHING

Gain Bandwidth Product :

175MHz

Power Dissipation :

3.2W

Current - Collector Cutoff (Max) :

100nA ICBO

Power - Max :

740mW

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Published :

2016

Collector Emitter Saturation Voltage :

500mV

Pin Count :

4

Max Breakdown Voltage :

100V

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

120V

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Manufacturer Package Identifier :

POWERDI-5

Terminal Finish :

Matte Tin (Sn)

Frequency :

175MHz

Transition Frequency :

175MHz

Factory Lead Time :

15 Weeks

hFE Min :

100

Max Collector Current :

2A

Weight :

95.991485mg

Collector Emitter Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

PowerDI™ 5

Mounting Type :

Surface Mount

Transistor Type :

NPN