DXTN07100BP5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Power - Max :

740mW

Current - Collector Cutoff (Max) :

100nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer Package Identifier :

POWERDI-5

JESD-609 Code :

e3

Max Power Dissipation :

3.2W

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

175MHz

Number of Terminations :

3

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

7V

JEDEC-95 Code :

TO-252

Number of Pins :

3

Transistor Type :

NPN

REACH SVHC :

No SVHC

Element Configuration :

Single

Collector Base Voltage (VCBO) :

120V

Gain Bandwidth Product :

175MHz

Weight :

95.991485mg

Mounting Type :

Surface Mount

Number of Elements :

1

Collector Emitter Breakdown Voltage :

100V

Transition Frequency :

175MHz

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Max Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Radiation Hardening :

No

Factory Lead Time :

15 Weeks

Max Collector Current :

2A

ECCN Code :

EAR99

Mount :

Surface Mount

hFE Min :

100

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Collector Emitter Saturation Voltage :

500mV

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

100V

Terminal Position :

Dual

Package / Case :

PowerDI™ 5

Power Dissipation :

3.2W

Published :

2016

Terminal Form :

Flat