DXTN07100BP5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Radiation Hardening :

No

Gain Bandwidth Product :

175MHz

Pin Count :

4

Collector Base Voltage (VCBO) :

120V

Peak Reflow Temperature (Cel) :

260

hFE Min :

100

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

7V

REACH SVHC :

No SVHC

Manufacturer Package Identifier :

POWERDI-5

Mount :

Surface Mount

Frequency :

175MHz

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Collector Emitter Breakdown Voltage :

100V

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

3.2W

JEDEC-95 Code :

TO-252

Transistor Type :

NPN

Published :

2016

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Factory Lead Time :

15 Weeks

Number of Pins :

3

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Terminal Form :

Flat

Power Dissipation :

3.2W

Collector Emitter Saturation Voltage :

500mV

Number of Terminations :

3

Transistor Element Material :

SILICON

Weight :

95.991485mg

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Max Collector Current :

2A

Power - Max :

740mW

RoHS Status :

ROHS3 Compliant

Transition Frequency :

175MHz

Package / Case :

PowerDI™ 5

Mounting Type :

Surface Mount

Max Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)