DXTN07100BFG-7
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- Mfr.Part #
- DXTN07100BFG-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A POWERDI3
- Stock
- 3,147
- In Stock ：
- 3,147
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-PowerVDFN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 900mW
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 15 Weeks
- Frequency - Transition :
- 175MHz
- Current - Collector (Ic) (Max) :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Mounting Type :
- Surface Mount
- Datasheets
- DXTN07100BFG-7
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NPN -55°C~175°C TJ 50nA ICBO 8-PowerVDFN Tape & Reel (TR) Surface Mount
DXTN07100BFG-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 200mA, 2A.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
DXTN07100BFG-7 Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 400mV @ 200mA, 2A
DXTN07100BFG-7 Applications
There are a lot of Diodes Incorporated
DXTN07100BFG-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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