DXTN5840CFDB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Surface Mount :

yes

Number of Terminals :

3

Product Type :

BJTs - Bipolar Transistors

Frequency - Transition :

150MHz

Collector-Emitter Voltage-Max :

40 V

Collector-Base Capacitance-Max :

70 pF

Current - Collector Cutoff (Max) :

100nA

Package :

Tape and Reel (TR)

Power Dissipation-Max (Abs) :

1.25 W

Transistor Type :

NPN

MSL :

MSL 1 - Unlimited

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

350mV @ 30mA, 3A

Reach Compliance Code :

Compliant

Technology :

Si

Power - Max :

690 mW

Polarity/Channel Type :

NPN

Transition Frequency :

320

Factory Lead Time :

13 Weeks

Transistor Polarity :

PNP

VCEsat-Max :

0.275 V

Current - Collector (Ic) (Max) :

5 A

Case Connection :

COLLECTOR

Operating Temperature :

-55°C ~ 150°C (TJ)

Subcategory :

Transistors

Supplier Device Package :

U-DFN2020-3 (Type B)

Mounting Style :

SMD/SMT

Brand :

Diodes Incorporated

DC Current Gain-Min (hFE) :

180

JESD-30 Code :

S-PDSO-N3

RoHS :

Details

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Reference Standard :

AEC-Q101

Continuous Collector Current :

100

Package / Case :

3-UDFN Exposed Pad

Mounting Type :

Surface Mount

Package Shape :

Square

Manufacturer :

Diodes Incorporated

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Terminal Form :

NO LEAD

JESD-609 Code :

e4

Qualification :

AEC-Q101

Transistor Element Material :

SILICON

Power Dissipation :

1.5

Voltage - Collector Emitter Breakdown (Max) :

40 V

Collector Current-Max (IC) :

5 A

Number of Elements :

1

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A, 2V

Packaging :

Cut Tape

Minimum Operating Temperature :

- 55 C

Series :

-

Product Category :

Bipolar Transistors - BJT