DXTN5820DFDB-7

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Mfr.Part #
DXTN5820DFDB-7
Manufacturer
Diodes Incorporated
Package / Case
3-UDFN Exposed Pad
Datasheet
Download
Description
SS LOW SAT TRANSISTOR U-DFN2020-
Stock
47,129
In Stock :
47,129

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Frequency - Transition :
80MHz
Maximum Operating Temperature :
+ 150 C
Series :
-
Package :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
6 A
Minimum Operating Temperature :
- 55 C
Continuous Collector Current :
100
Product Category :
Bipolar Transistors - BJT
DC Current Gain (hFE) (Min) @ Ic, Vce :
280 @ 500mA, 2V
Qualification :
AEC-Q101
Mounting Type :
Surface Mount
Power Dissipation :
1.5
Operating Temperature :
-55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max) :
100nA
Transistor Polarity :
PNP
Voltage - Collector Emitter Breakdown (Max) :
20 V
Brand :
Diodes Incorporated
Package / Case :
3-UDFN Exposed Pad
Subcategory :
Transistors
MSL :
MSL 1 - Unlimited
Packaging :
Cut Tape
Product Status :
Active
Technology :
Si
Product Type :
BJTs - Bipolar Transistors
Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
275mV @ 300mA, 6A
Mounting Style :
SMD/SMT
Power - Max :
690 mW
Supplier Device Package :
U-DFN2020-3 (Type B)
Transition Frequency :
280
Manufacturer :
Diodes Incorporated
Datasheets
DXTN5820DFDB-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DXTN5820DFDB-7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:3-UDFN Exposed Pad, DXTN5820DFDB-7 pinout, DXTN5820DFDB-7 datasheet PDF, DXTN5820DFDB-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DXTN5820DFDB-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DXTN5820DFDB-7


NPN -55°C ~ 150°C (TJ) 100nA 3-UDFN Exposed Pad Cut Tape Surface Mount

DXTN5820DFDB-7 Overview


In this device, the DC current gain is 280 @ 500mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 275mV @ 300mA, 6A.Maintaining the continuous collector voltage at 100 is essential for high efficiency.280 is present in the transition frequency.Supplier device package U-DFN2020-3 (Type B) comes with the product.The device exhibits a collector-emitter breakdown at 20 V.

DXTN5820DFDB-7 Features


the DC current gain for this device is 280 @ 500mA, 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
a transition frequency of 280
the supplier device package of U-DFN2020-3 (Type B)


DXTN5820DFDB-7 Applications


There are a lot of Diodes Incorporated
DXTN5820DFDB-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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