DXTN5820DFDB-7
- Mfr.Part #
- DXTN5820DFDB-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- SS LOW SAT TRANSISTOR U-DFN2020-
- Stock
- 47,129
- In Stock :
- 47,129
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Frequency - Transition :
- 80MHz
- Maximum Operating Temperature :
- + 150 C
- Series :
- -
- Package :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 6 A
- Minimum Operating Temperature :
- - 55 C
- Continuous Collector Current :
- 100
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 280 @ 500mA, 2V
- Qualification :
- AEC-Q101
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.5
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Polarity :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 20 V
- Brand :
- Diodes Incorporated
- Package / Case :
- 3-UDFN Exposed Pad
- Subcategory :
- Transistors
- MSL :
- MSL 1 - Unlimited
- Packaging :
- Cut Tape
- Product Status :
- Active
- Technology :
- Si
- Product Type :
- BJTs - Bipolar Transistors
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 300mA, 6A
- Mounting Style :
- SMD/SMT
- Power - Max :
- 690 mW
- Supplier Device Package :
- U-DFN2020-3 (Type B)
- Transition Frequency :
- 280
- Manufacturer :
- Diodes Incorporated
- Datasheets
- DXTN5820DFDB-7

NPN -55°C ~ 150°C (TJ) 100nA 3-UDFN Exposed Pad Cut Tape Surface Mount
DXTN5820DFDB-7 Overview
In this device, the DC current gain is 280 @ 500mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 275mV @ 300mA, 6A.Maintaining the continuous collector voltage at 100 is essential for high efficiency.280 is present in the transition frequency.Supplier device package U-DFN2020-3 (Type B) comes with the product.The device exhibits a collector-emitter breakdown at 20 V.
DXTN5820DFDB-7 Features
the DC current gain for this device is 280 @ 500mA, 2V
the vce saturation(Max) is 275mV @ 300mA, 6A
a transition frequency of 280
the supplier device package of U-DFN2020-3 (Type B)
DXTN5820DFDB-7 Applications
There are a lot of Diodes Incorporated
DXTN5820DFDB-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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