DTDG23YPT100

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

Collector Emitter Voltage (VCEO) :

400mV

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

22 k Ω

Terminal Finish :

Tin/Copper (Sn/Cu)

Max Power Dissipation :

1.5W

Length :

4.5mm

ECCN Code :

EAR99

Operating Supply Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-F3

Voltage - Rated DC :

60V

Terminal Form :

Flat

Height :

1.5mm

Pin Count :

3

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

1A

Number of Elements :

1

hFE Min :

300

Current Rating :

1A

Polarity :

NPN

Package / Case :

TO-243AA

Number of Pins :

4

Max Operating Temperature :

150°C

Case Connection :

COLLECTOR

Max Collector Current :

1A

Collector Emitter Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 500mA

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

80MHz

Base Part Number :

DTDG23

Transition Frequency :

80MHz

Resistor - Base (R1) :

2.2 k Ω

Number of Terminations :

3

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Width :

2.5mm

Pbfree Code :

yes

Max Output Current :

1A

Time@Peak Reflow Temperature-Max (s) :

10

Max Breakdown Voltage :

60V

Element Configuration :

Single

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 500mA 2V

Mount :

Surface Mount

Radiation Hardening :

No