DTDG14GPT100

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

VCEsat-Max :

0.4 V

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR

Base Part Number :

DTDG14

Max Operating Temperature :

150°C

Package / Case :

TO-243AA

Continuous Collector Current :

1A

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

Radiation Hardening :

No

Max Breakdown Voltage :

60V

Collector Emitter Breakdown Voltage :

60V

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Voltage (VCEO) :

400mV

Operating Supply Voltage :

60V

Min Operating Temperature :

-55°C

Max Power Dissipation :

2W

Terminal Finish :

TIN COPPER

Time@Peak Reflow Temperature-Max (s) :

10

Number of Elements :

1

Current Rating :

1A

JESD-609 Code :

e2

Frequency - Transition :

80MHz

Mount :

Surface Mount

Element Configuration :

Single

Pin Count :

3

Number of Pins :

3

REACH SVHC :

No SVHC

Power Dissipation :

500mW

Polarity :

NPN

Current - Collector Cutoff (Max) :

500nA ICBO

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

Terminal Form :

Flat

Max Output Current :

1A

Termination :

SMD/SMT

HTS Code :

8541.21.00.95

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Transition Frequency :

80MHz

hFE Min :

300

Emitter Base Voltage (VEBO) :

5V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 500mA 2V

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 500mA

Case Connection :

COLLECTOR

Published :

2006

Number of Terminations :

3

Transistor Type :

NPN - Pre-Biased