DTC013ZUBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Max Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

Max Collector Current :

100mA

JESD-30 Code :

R-PDSO-F3

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

150mV

Published :

2016

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN RESISTOR

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Form :

Flat

Power - Max :

200mW

Current - Collector Cutoff (Max) :

500nA

Frequency - Transition :

250MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Transistor Type :

NPN - Pre-Biased

Package / Case :

SC-85

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Number of Pins :

85

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transition Frequency :

250MHz

Transistor Element Material :

SILICON