DTC013ZEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Packaging :

Cut Tape (CT)

Max Power Dissipation :

150mW

Factory Lead Time :

13 Weeks

Max Breakdown Voltage :

50V

Power - Max :

150mW

Frequency - Transition :

250MHz

Published :

2016

Transistor Element Material :

SILICON

Package / Case :

SC-89, SOT-490

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

250MHz

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

150mV

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-F3

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Resistor - Base (R1) :

1 k Ω

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Transistor Type :

NPN - Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Position :

Dual

Terminal Form :

Flat

Max Collector Current :

100mA