DTB123ESTP

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Finish :

TIN SILVER COPPER

Transistor Type :

PNP - Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

10

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Mount :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Pin Count :

3

Radiation Hardening :

No

Package / Case :

SC-72 Formed Leads

Current Rating :

-500mA

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Frequency - Transition :

200MHz

Packaging :

Tape and Box (TB)

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

DTB123

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

39 @ 50mA 5V

Max Collector Current :

500mA

Number of Pins :

3

Lead Free :

Lead Free

Element Configuration :

Single

Published :

2006

Max Power Dissipation :

300mW

Voltage - Rated DC :

-50V

Transition Frequency :

200MHz

Resistor - Emitter Base (R2) :

2.2 k Ω

hFE Min :

39

HTS Code :

8541.21.00.75

Number of Terminations :

3

Resistor - Base (R1) :

2.2 k Ω

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Min Operating Temperature :

-55°C

JESD-609 Code :

e1

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant