DTB123ECHZGT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Resistor - Base (R1) :

2.2 k Ω

Configuration :

SINGLE WITH BUILT-IN RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

39 @ 50mA 5V

Frequency - Transition :

200MHz

Number of Terminations :

3

Surface Mount :

yes

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Transistor Type :

PNP - Pre-Biased + Diode

Mounting Type :

Surface Mount

Terminal Position :

Dual

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

50V

Packaging :

Cut Tape (CT)

Factory Lead Time :

13 Weeks

Resistor - Emitter Base (R2) :

2.2 k Ω

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

Polarity/Channel Type :

PNP

Transition Frequency :

200MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

200mW

ECCN Code :

EAR99

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0