DTA023JMT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Form :

Flat

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Polarity :

PNP

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Published :

2016

Output Voltage :

-70mV

Resistor - Emitter Base (R2) :

47 k Ω

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

150mV

Frequency - Transition :

250MHz

Mount :

Surface Mount

Number of Pins :

3

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Transistor Type :

PNP - Pre-Biased

Package / Case :

SOT-723

Terminal Position :

Dual

hFE Min :

80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Factory Lead Time :

13 Weeks

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Transistor Element Material :

SILICON

Transition Frequency :

250MHz

Transistor Application :

SWITCHING

Max Frequency :

250MHz

Mounting Type :

Surface Mount

Continuous Collector Current :

-100mA

Number of Terminations :

3

Max Power Dissipation :

150mW

ECCN Code :

EAR99

Resistor - Base (R1) :

2.2 k Ω