DTA013ZUBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Max Power Dissipation :

200mW

Collector Emitter Breakdown Voltage :

50V

Published :

2016

Max Collector Current :

100mA

JESD-30 Code :

R-PDSO-F3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Dual

Number of Pins :

85

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

PNP

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Transition Frequency :

250MHz

Collector Emitter Voltage (VCEO) :

150mV

Terminal Form :

Flat

DC Current Gain-Min (hFE) :

30

Mount :

Surface Mount

ECCN Code :

EAR99

Package / Case :

SC

Packaging :

Cut Tape (CT)

Number of Elements :

1

Max Breakdown Voltage :

50V

Number of Terminations :

3

Reach Compliance Code :

not_compliant