DTA023JEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Lead Free :

Lead Free

Terminal Form :

Flat

Weight :

29.993795mg

JESD-30 Code :

R-PDSO-F3

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Factory Lead Time :

13 Weeks

Published :

2016

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

hFE Min :

80

Mount :

Surface Mount

Output Voltage :

-70mV

Resistor - Emitter Base (R2) :

47 k Ω

Frequency - Transition :

250MHz

Package / Case :

SC-89, SOT-490

Max Frequency :

250MHz

Resistor - Base (R1) :

2.2 k Ω

ECCN Code :

EAR99

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Max Power Dissipation :

150mW

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transition Frequency :

250MHz

Continuous Collector Current :

-100mA

Terminal Position :

Dual

Transistor Type :

PNP - Pre-Biased

Collector Emitter Voltage (VCEO) :

150mV