DTA023EEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Element Configuration :

Single

Frequency - Transition :

250MHz

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Max Power Dissipation :

150mW

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

250mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistor - Base (R1) :

2.2 k Ω

Number of Elements :

1

hFE Min :

20

Transition Frequency :

250MHz

Max Breakdown Voltage :

50V

Terminal Form :

Flat

Weight :

29.993795mg

Resistor - Emitter Base (R2) :

2.2 k Ω

JESD-30 Code :

R-PDSO-F3

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Published :

2015

Output Voltage :

-100mV

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Package / Case :

SC-89, SOT-490

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Polarity :

PNP

Max Collector Current :

100mA

Continuous Collector Current :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 20mA 10V

Max Operating Temperature :

150°C

Max Frequency :

250MHz

Reach Compliance Code :

not_compliant