DSS4320T-7
- Mfr.Part #
- DSS4320T-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A SOT23-3
- Stock
- 2,243
- In Stock :
- 2,243
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 20V
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 310mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- 20V
- Termination :
- SMD/SMT
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 300mA, 3A
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Max Collector Current :
- 2A
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 1A 2V
- Max Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 600mW
- Width :
- 1.3mm
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 600mW
- hFE Min :
- 220
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Height :
- 1mm
- Number of Elements :
- 1
- Base Part Number :
- DSS4320
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- DSS4320T-7

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS4320T-7 Overview
DC current gain in this device equals 220 @ 1A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 310mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 310mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2A volts.
DSS4320T-7 Features
the DC current gain for this device is 220 @ 1A 2V
a collector emitter saturation voltage of 310mV
the vce saturation(Max) is 310mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS4320T-7 Applications
There are a lot of Diodes Incorporated
DSS4320T-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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