DMT10H025LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Transistor Type :

1 N-Channel

Product Status :

Active

FET Type :

N-Channel

Configuration :

Single

Power Dissipation (Max) :

1.3W (Ta), 12.9W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Package :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1639 pF @ 50 V

Base Product Number :

DMT10

Current - Continuous Drain (Id) @ 25°C :

7.1A (Ta)

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Polarity :

N-Channel

Packaging :

Cut Tape

Product Type :

MOSFET

Subcategory :

MOSFETs

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

22.9 nC @ 10 V

Vgs(th) (Max) @ Id :

3V @ 250µA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

25mOhm @ 20A, 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100 V

Supplier Device Package :

8-SO

Mounting Style :

SMD/SMT

Product Category :

MOSFET

Channel Mode :

Enhancement

Mounting Type :

Surface Mount

FET Feature :

-

Manufacturer :

Diodes Incorporated

Rise Time :

7 ns

Brand :

Diodes Incorporated