DMT10H009SK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Rise Time :

15.9 ns

Base Product Number :

DMT10

Supplier Device Package :

TO-252, (D-Pak)

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 20A, 10V

Pulsed Drain Current-Max (IDM) :

360 A

Power Dissipation-Max (Abs) :

3.2 W

Number of Channels :

1 Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Terminal Form :

Gull wing

Number of Terminals :

2

FET Feature :

-

Series :

-

Reach Compliance Code :

Unknown

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

34 nC @ 10 V

Channel Type :

N Channel

Continuous Drain Current Id :

91

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer :

Diodes Incorporated

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2028 pF @ 50 V

Feedback Cap-Max (Crss) :

11 pF

Case Connection :

DRAIN

Mounting Style :

SMD/SMT

Power Dissipation (Max) :

1.7W (Ta)

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Product Type :

MOSFET

Reference Standard :

AEC-Q101

Minimum Operating Temperature :

- 55 C

Power Dissipation :

3.2

JEDEC-95 Code :

TO-252

Drain Current-Max (Abs) (ID) :

91 A

Configuration :

Single

Surface Mount :

yes

Subcategory :

MOSFETs

Factory Lead Time :

22 Weeks

DS Breakdown Voltage-Min :

100 V

Package :

Tape and Reel (TR)

Product Category :

MOSFET

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

181 mJ

Drain-source On Resistance-Max :

0.0091 Ω

Brand :

Diodes Incorporated

MSL :

MSL 1 - Unlimited

Current - Continuous Drain (Id) @ 25°C :

91A (Tc)

Packaging :

Cut Tape

Drain to Source Voltage (Vdss) :

100 V

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Terminal Position :

Dual

Qualification :

-