DMT10H014LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

8.9A

Power Dissipation-Max :

1.2W Ta

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

33.3nC @ 10V

Factory Lead Time :

23 Weeks

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8.9A Ta

DS Breakdown Voltage-Min :

100V

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1871pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

Automotive, AEC-Q101

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

15m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.018Ohm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

85 mJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Vgs (Max) :

±20V

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G8

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2016

Pulsed Drain Current-Max (IDM) :

54A

Number of Elements :

1

Additional Feature :

High Reliability

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED