DMS3019SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

9A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Radiation Hardening :

No

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Nominal Vgs :

2.4 V

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

7A 5.7A

Continuous Drain Current (ID) :

7A

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

1.19W

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drain-source On Resistance-Max :

0.015Ohm

Pbfree Code :

yes

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

15m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1932pF @ 15V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Weight :

73.992255mg

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Polarity :

NPN

Mount :

Surface Mount

Factory Lead Time :

16 Weeks

Element Configuration :

Dual

Number of Pins :

8

Power Dissipation :

1.19W

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Published :

2010