DMS3016SSSA-13
- Mfr.Part #
- DMS3016SSSA-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9.8A 8SO
- Stock
- 1,794
- In Stock :
- 1,794
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 6.62 ns
- Turn-Off Delay Time :
- 36.41 ns
- Pin Count :
- 8
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Number of Terminations :
- 8
- Weight :
- 73.992255mg
- Terminal Position :
- Dual
- Factory Lead Time :
- 9 Weeks
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation-Max :
- 1.54W Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 8.73ns
- Vgs (Max) :
- ±12V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 9.8A Ta
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1849pF @ 15V
- Fall Time (Typ) :
- 4.69 ns
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Additional Feature :
- High Reliability
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 9.8A
- Pbfree Code :
- yes
- Number of Channels :
- 1
- Power Dissipation :
- 1.54W
- Gate to Source Voltage (Vgs) :
- 12V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 9.8A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- DS Breakdown Voltage-Min :
- 30V
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Published :
- 2010
- Pulsed Drain Current-Max (IDM) :
- 90A
- JESD-609 Code :
- e3
- FET Feature :
- Schottky Diode (Body)
- Number of Elements :
- 1
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- DMS3016SSSA-13

N-Channel Tape & Reel (TR) 13m Ω @ 9.8A, 10V ±12V 1849pF @ 15V 43nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
DMS3016SSSA-13 Overview
A device's maximum input capacitance is 1849pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 36.41 ns.Its maximum pulsed drain current is 90A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.62 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMS3016SSSA-13 Features
a continuous drain current (ID) of 9.8A
the turn-off delay time is 36.41 ns
based on its rated peak drain current 90A.
a 30V drain to source voltage (Vdss)
DMS3016SSSA-13 Applications
There are a lot of Diodes Incorporated
DMS3016SSSA-13 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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