DMS3012SFG-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Pin Count :

8

FET Feature :

Schottky Diode (Body)

Turn On Delay Time :

15.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Fall Time (Typ) :

13.6 ns

Mount :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 15V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerVDFN

JESD-30 Code :

S-PDSO-N5

Continuous Drain Current (ID) :

12A

Rise Time :

27.8ns

Terminal Position :

Dual

Factory Lead Time :

6 Weeks

Weight :

72.007789mg

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9.5A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.01Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

890mW Ta

Number of Terminations :

5

Additional Feature :

High Reliability

Turn-Off Delay Time :

29.7 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 13.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

14.7nC @ 10V