DMS3014SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

FET Type :

N-Channel

Number of Elements :

1

ECCN Code :

EAR99

Number of Pins :

8

Fall Time (Typ) :

6.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

63A

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Feature :

Schottky Diode (Body)

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.4A, 10V

Rise Time :

24.4ns

Power Dissipation :

1.55W

Weight :

73.992255mg

Continuous Drain Current (ID) :

10.4A

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

2296pF @ 15V

Pbfree Code :

yes

Number of Channels :

1

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

10.4A Ta

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

33.1 ns

Turn On Delay Time :

5.5 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.55W Ta

Mount :

Surface Mount

Published :

2010

REACH SVHC :

No SVHC

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

45.7nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40