DMS3014SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10.4A Ta

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Fall Time (Typ) :

6.6 ns

Turn-Off Delay Time :

33.1 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

45.7nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8

ECCN Code :

EAR99

Turn On Delay Time :

5.5 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

2296pF @ 15V

Rds On (Max) @ Id, Vgs :

13m Ω @ 10.4A, 10V

Mount :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Published :

2010

Power Dissipation-Max :

1.55W Ta

Pulsed Drain Current-Max (IDM) :

63A

JESD-609 Code :

e3

Terminal Position :

Dual

Additional Feature :

High Reliability

Rise Time :

24.4ns

Weight :

73.992255mg

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

10.4A

REACH SVHC :

No SVHC

FET Feature :

Schottky Diode (Body)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation :

1.55W

Factory Lead Time :

20 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

Mounting Type :

Surface Mount