DMS3014SSS-13
- Mfr.Part #
- DMS3014SSS-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10.4A 8SO
- Stock
- 20,455
- In Stock :
- 20,455
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 10.4A Ta
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- Fall Time (Typ) :
- 6.6 ns
- Turn-Off Delay Time :
- 33.1 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 45.7nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 5.5 ns
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2296pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10.4A, 10V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2010
- Power Dissipation-Max :
- 1.55W Ta
- Pulsed Drain Current-Max (IDM) :
- 63A
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Additional Feature :
- High Reliability
- Rise Time :
- 24.4ns
- Weight :
- 73.992255mg
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 10.4A
- REACH SVHC :
- No SVHC
- FET Feature :
- Schottky Diode (Body)
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Power Dissipation :
- 1.55W
- Factory Lead Time :
- 20 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Datasheets
- DMS3014SSS-13

N-Channel Tape & Reel (TR) 13m Ω @ 10.4A, 10V ±12V 2296pF @ 15V 45.7nC @ 10V 8-SOIC (0.154, 3.90mm Width)
DMS3014SSS-13 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2296pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 33.1 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 63A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMS3014SSS-13 Features
a continuous drain current (ID) of 10.4A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 33.1 ns
based on its rated peak drain current 63A.
DMS3014SSS-13 Applications
There are a lot of Diodes Incorporated
DMS3014SSS-13 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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