DMP6110SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power - Max :

1.2W

DS Breakdown Voltage-Min :

60V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.105Ohm

Max Power Dissipation :

1.2W

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

FET Type :

2 P-Channel (Dual)

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

105m Ω @ 4.5A, 10V

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

2013

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

969pF @ 30V

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current (ID) :

3.3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8