DMP6023LE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

6 ns

Number of Channels :

1

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

110 ns

Drain-source On Resistance-Max :

0.028Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Weight :

188.014037mg

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

62.9 mJ

Number of Terminations :

4

Continuous Drain Current (ID) :

18.2A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

50A

Length :

6.5mm

Input Capacitance (Ciss) (Max) @ Vds :

2569pF @ 30V

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Width :

3.5mm

Current - Continuous Drain (Id) @ 25°C :

7A Ta 18.2A Tc

Drain to Source Voltage (Vdss) :

60V

Reach Compliance Code :

not_compliant

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Capacitance :

2.569nF

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Rise Time :

7.1ns

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

7A

ECCN Code :

EAR99

Fall Time (Typ) :

62 ns

Mounting Type :

Surface Mount

Element Configuration :

Single

Case Connection :

DRAIN

Factory Lead Time :

22 Weeks

JESD-30 Code :

R-PDSO-G4

Drain to Source Breakdown Voltage :

-60V

Height :

1.8mm

Rds On (Max) @ Id, Vgs :

28m Ω @ 5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

53.1nC @ 10V

Power Dissipation-Max :

2W Ta

JESD-609 Code :

e3

Published :

2015

Terminal Form :

Gull wing