DMN5L06W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

200mW Ta

Element Configuration :

Single

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Weight :

6.010099mg

Radiation Hardening :

No

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.7V

Width :

1.35mm

Length :

2.2mm

Transistor Application :

SWITCHING

Height :

1mm

Drain to Source Breakdown Voltage :

50V

Current - Continuous Drain (Id) @ 25°C :

280mA Ta

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

FET Type :

N-Channel

Continuous Drain Current (ID) :

280mA

Pin Count :

3

Drain-source On Resistance-Max :

3Ohm

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

3 Ω @ 200mA, 2.7V

Published :

2005

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Feedback Cap-Max (Crss) :

5 pF

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.28A

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ