DMN5L06TK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Width :

800μm

Drain to Source Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Length :

1.6mm

ECCN Code :

EAR99

FET Type :

N-Channel

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

0.28A

Power Dissipation-Max :

150mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 5V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

280mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Package / Case :

SOT-523

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

280mA

Feedback Cap-Max (Crss) :

5 pF

Pbfree Code :

yes

Mounting Type :

Surface Mount

Weight :

2.012816mg

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

150mW

Number of Pins :

3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

2 Ω @ 50mA, 5V

Drain-source On Resistance-Max :

3Ohm

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Height :

750μm

Terminal Position :

Dual

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant