DMN5L06-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Current Rating :

280mA

Time@Peak Reflow Temperature-Max (s) :

40

Drain-source On Resistance-Max :

3Ohm

Power Dissipation-Max :

350mW Ta

Mount :

Surface Mount

Lead Free :

Lead Free

Published :

2007

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

50V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.7V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3 Ω @ 200mA, 2.7V

Feedback Cap-Max (Crss) :

5 pF

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

50V

Terminal Position :

Dual

Continuous Drain Current (ID) :

280mA

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.28A

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

280mA Ta

Power Dissipation :

350mW

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1.2V @ 250µA